CVD flowable gap fill

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7582555
SERIAL NO

11323812

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Abstract

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The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NOVELLUS SYSTEMS, INC.SAN JOSE, CA1054

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Barnes, Michael San Ramon , US 104 2925
Huang, Judy H Los Gatos , US 37 1885
Lang, Chi-I Sunnyvale , US 113 1557
Shanker, Sunil Santa Clara , US 56 1016

Cited Art Landscape

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* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
ASM JAPAN K.K. (1)
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NOVELLUS SYSTEMS, INC. (16)
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8580697 CVD flowable gap fill 14 2011
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9257302 CVD flowable gap fill 4 2012
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LAM RESEARCH CORPORATION (4)
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ASM IP HOLDING B.V. (36)
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* Cited By Examiner

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