US Patent No: 7,582,555

Number of patents in Portfolio can not be more than 2000

CVD flowable gap fill

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Abstract

The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NOVELLUS SYSTEMS, INC.SAN JOSE, CA1006

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Barnes, Michael San Ramon, CA 88 1526
Huang, Judy H Los Gatos, CA 35 725
Lang, Chi-I Sunnyvale, CA 86 359
Shanker, Sunil Sunnyvale, CA 60 89

Cited Art

Patent Info (Count) # Cites Year
 
APPLIED MATERIALS, INC. (7)
6,054,379 Method of depositing a low k dielectric with organo silane 325 1998
6,072,227 Low power method of depositing a low k dielectric with organo silane 165 1998
6,413,583 Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound 84 1999
6,660,663 Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds 23 2000
6,448,187 Method of improving moisture resistance of low dielectric constant films 37 2001
7,498,273 Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes 23 2006
2007/0281,495 FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES 31 2006
 
TOKYO ELECTRON LIMITED (5)
5,874,367 Method of treating a semi-conductor wafer 121 1994
6,287,989 Method of treating a semiconductor wafer in a chamber using hydrogen peroxide and silicon containing gas or vapor 11 1998
6,640,840 Delivery of liquid precursors to semiconductor processing reactors 15 2000
6,653,247 Dielectric layer for a semiconductor device and method of producing the same 15 2001
6,846,757 Dielectric layer for a semiconductor device and method of producing the same 8 2003
 
Trikon Equipments Limited (3)
6,242,366 Methods and apparatus for treating a semiconductor substrate 17 1999
6,475,564 Deposition of a siloxane containing polymer 15 2000
6,544,858 Method for treating silicon-containing polymer layers with plasma or electromagnetic radiation 14 2000
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
5,516,721 Isolation structure using liquid phase oxide deposition 69 1995
6,218,268 Two-step borophosphosilicate glass deposition process and related devices and apparatus 30 1998
 
MICRON TECHNOLOGY, INC. (2)
6,383,951 Low dielectric constant material for integrated circuit fabrication 45 1998
6,300,219 Method of forming trench isolation regions 86 1999
 
TRIKON TECHNOLOGIES LIMITED (2)
5,858,880 Method of treating a semi-conductor wafer 79 1996
5,932,289 Method for filling substrate recesses using pressure and heat treatment 18 1997
 
GLOBALFOUNDRIES INC. (1)
6,828,162 System and method for active control of BPSG deposition 12 2001
 
LSI LOGIC CORPORATION (1)
6,858,195 Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material 2 2001
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
6,143,626 Method of manufacturing a semiconductor device using a trench isolation technique 18 1999
 
NEC ELECTRONICS CORPORATION (1)
4,740,480 Method for forming a semiconductor device with trench isolation structure 57 1987
 
NOVELLUS SYSTEMS, INC. (1)
7,074,690 Selective gap-fill process 18 2004
 
QIMONDA AG (1)
6,790,737 Method for fabricating thin metal layers from the liquid phase 11 2003
 
SAMSUNG ELECTRONICS CO., LTD. (1)
5,902,127 Methods for forming isolation trenches including doped silicon oxide 55 1996
 
SANDISK 3D LLC (1)
6,984,561 Method for making high density nonvolatile memory 45 2004
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
7,074,727 Process for improving dielectric properties in low-k organosilicate dielectric material 4 2003
 
TELEDYNE DALSA SEMICONDUCTOR INC. (1)
5,320,983 Spin-on glass processing technique for the fabrication of semiconductor devices 38 1992
 
UNITED MICROELECTRONICS CORP. (1)
5,899,751 Method for forming a planarized dielectric layer 13 1997

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
NOVELLUS SYSTEMS, INC. (5)
7,888,273 Density gradient-free gap fill 2 2007
7,888,233 Flowable film dielectric gap fill process 2 2009
7,915,139 CVD flowable gap fill 2 2009
8,278,224 Flowable oxide deposition using rapid delivery of process gases 0 2009
8,187,951 CVD flowable gap fill 0 2009
 
APPLIED MATERIALS, INC. (1)
8,329,587 Post-planarization densification 1 2010
 
Other [Check patent profile for assignment information] (1)
8,466,067 Post-planarization densification 0 2011

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