CVD flowable gap fill

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7582555
SERIAL NO

11323812

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Abstract

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The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NOVELLUS SYSTEMS, INC.SAN JOSE, CA1052

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Barnes, Michael San Ramon , US 91 2697
Huang, Judy H Los Gatos , US 37 1687
Lang, Chi-I Sunnyvale , US 113 1362
Shanker, Sunil Santa Clara , US 56 852

Cited Art Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
5516721 Isolation structure using liquid phase oxide deposition 82 1995
6218268 Two-step borophosphosilicate glass deposition process and related devices and apparatus 45 1998
 
NOVELLUS SYSTEMS, INC. (1)
7074690 Selective gap-fill process 33 2004
 
MICRON TECHNOLOGY, INC. (2)
* 6383951 Low dielectric constant material for integrated circuit fabrication 155 1998
6300219 Method of forming trench isolation regions 100 1999
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
* 7074727 Process for improving dielectric properties in low-k organosilicate dielectric material 11 2003
 
GLOBALFOUNDRIES INC. (1)
6828162 System and method for active control of BPSG deposition 24 2001
 
SAMSUNG ELECTRONICS CO., LTD. (1)
5902127 Methods for forming isolation trenches including doped silicon oxide 77 1996
 
TRIKON EQUIPMENTS LIMITED (3)
6242366 Methods and apparatus for treating a semiconductor substrate 29 1999
6475564 Deposition of a siloxane containing polymer 28 2000
6544858 Method for treating silicon-containing polymer layers with plasma or electromagnetic radiation 39 2000
 
TRIKON TECHNOLOGIES LIMITED (2)
5858880 Method of treating a semi-conductor wafer 91 1996
5932289 Method for filling substrate recesses using pressure and heat treatment 30 1997
 
TELEDYNE DALSA SEMICONDUCTOR INC. (1)
5320983 Spin-on glass processing technique for the fabrication of semiconductor devices 50 1992
 
QIMONDA AG (1)
6790737 Method for fabricating thin metal layers from the liquid phase 23 2003
 
SANDISK TECHNOLOGIES LLC (1)
* 6984561 Method for making high density nonvolatile memory 77 2004
 
UNITED MICROELECTRONICS CORP. (1)
5899751 Method for forming a planarized dielectric layer 25 1997
 
RPX CORPORATION (1)
6143626 Method of manufacturing a semiconductor device using a trench isolation technique 30 1999
 
APPLIED MATERIALS, INC. (7)
* 6054379 Method of depositing a low k dielectric with organo silane 350 1998
* 6072227 Low power method of depositing a low k dielectric with organo silane 280 1998
* 6413583 Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound 144 1999
* 6660663 Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds 38 2000
* 6448187 Method of improving moisture resistance of low dielectric constant films 68 2001
* 7498273 Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes 51 2006
2007/0281,495 FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES 65 2006
 
AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (1)
* 6858195 Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material 10 2001
 
NEC ELECTRONICS CORPORATION (1)
4740480 Method for forming a semiconductor device with trench isolation structure 70 1987
 
TOKYO ELECTRON LIMITED (5)
5874367 Method of treating a semi-conductor wafer 135 1994
6287989 Method of treating a semiconductor wafer in a chamber using hydrogen peroxide and silicon containing gas or vapor 23 1998
6640840 Delivery of liquid precursors to semiconductor processing reactors 27 2000
6653247 Dielectric layer for a semiconductor device and method of producing the same 27 2001
6846757 Dielectric layer for a semiconductor device and method of producing the same 20 2003
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
9735024 Method of atomic layer etching using functional group-containing fluorocarbon 0 2015
 
LAM RESEARCH CORPORATION (2)
9245739 Low-K oxide deposition by hydrolysis and condensation 3 2014
9627608 Dielectric repair for emerging memory devices 0 2014
 
NOVELLUS SYSTEMS, INC. (16)
7888273 Density gradient-free gap fill 23 2007
8557712 PECVD flowable dielectric gap fill 16 2008
7888233 Flowable film dielectric gap fill process 44 2009
7915139 CVD flowable gap fill 151 2009
8278224 Flowable oxide deposition using rapid delivery of process gases 37 2009
8187951 CVD flowable gap fill 40 2009
8728958 Gap fill integration 5 2010
8481403 Flowable film dielectric gap fill process 9 2011
8580697 CVD flowable gap fill 12 2011
8685867 Premetal dielectric integration process 8 2011
9719169 System and apparatus for flowable deposition in semiconductor fabrication 0 2011
9257302 CVD flowable gap fill 1 2012
8846536 Flowable oxide film with tunable wet etch rate 8 2012
9064684 Flowable oxide deposition using rapid delivery of process gases 3 2012
8809161 Flowable film dielectric gap fill process 8 2013
9299559 Flowable oxide film with tunable wet etch rate 1 2014
 
PS4 LUXCO S.A.R.L. (1)
* 2015/0236,022 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 0 2013
 
LONGITUDE SEMICONDUCTOR S.A.R.L. (1)
8580649 Method for manufacturing semiconductor device 1 2012
 
APPLIED MATERIALS, INC. (7)
8329587 Post-planarization densification 5 2010
* 2011/0081,782 POST-PLANARIZATION DENSIFICATION 100 2010
8466067 Post-planarization densification 10 2011
* 2011/0212,620 POST-PLANARIZATION DENSIFICATION 5 2011
8765573 Air gap formation 4 2011
9018108 Low shrinkage dielectric films 2 2013
8921235 Controlled air gap formation 0 2013
 
SAMSUNG ELECTRONICS CO., LTD. (1)
9633836 Methods of forming semiconductor devices including low-k dielectric layer 0 2014
 
ASM IP HOLDING B.V. (22)
9659799 Systems and methods for dynamic semiconductor process scheduling 0 2012
9640416 Single-and dual-chamber module-attachable wafer-handling chamber 0 2012
9589770 Method and systems for in-situ formation of intermediate reactive species 0 2013
9484191 Pulsed remote plasma method and system 0 2013
9117657 Method for filling recesses using pre-treatment with hydrocarbon-containing gas 22 2013
9558931 System and method for gas-phase sulfur passivation of a semiconductor surface 0 2013
9190263 Method for forming SiOCH film using organoaminosilane annealing 22 2013
9324811 Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same 8 2013
9556516 Method for forming Ti-containing film by PEALD using TDMAT or TDEAT 0 2013
9447498 Method for performing uniform processing in gas system-sharing multiple reaction chambers 8 2014
9404587 Lockout tagout for semiconductor vacuum valve 8 2014
9543180 Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum 0 2014
9657845 Variable conductance gas distribution apparatus and method 0 2014
9384987 Metal oxide protective layer for a semiconductor device 8 2014
9478415 Method for forming film having low resistance and shallow junction depth 0 2015
9605342 Process gas management for an inductively-coupled plasma deposition reactor 0 2015
9412564 Semiconductor reaction chamber with plasma capabilities 8 2015
9647114 Methods of forming highly p-type doped germanium tin films and structures and devices including the films 0 2015
9711345 Method for forming aluminum nitride-based film by PEALD 0 2015
9455138 Method for forming dielectric film in trenches by PEALD using H-containing gas 1 2015
9607837 Method for forming silicon oxide cap layer for solid state diffusion process 0 2015
9627221 Continuous process incorporating atomic layer etching 0 2015
 
ASM AMERICA, INC. (1)
9394608 Semiconductor processing reactor and components thereof 8 2010
 
VERSUM MATERIALS US, LLC (3)
8993072 Halogenated organoaminosilane precursors and methods for depositing films comprising same 0 2012
9200167 Alkoxyaminosilane compounds and applications thereof 0 2013
9677178 Alkoxyaminosilane compounds and applications thereof 0 2015
* Cited By Examiner

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