CVD flowable gap fill

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7582555
SERIAL NO

11323812

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Abstract

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The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NOVELLUS SYSTEMS, INC.SAN JOSE, CA1051

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Barnes, Michael San Ramon , US 104 2822
Huang, Judy H Los Gatos , US 37 1790
Lang, Chi-I Sunnyvale , US 113 1470
Shanker, Sunil Santa Clara , US 56 941

Cited Art Landscape

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Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
ASM JAPAN K.K. (1)
9793148 Method for positioning wafers in multiple wafer transport 0 2011
 
NOVELLUS SYSTEMS, INC. (16)
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9257302 CVD flowable gap fill 3 2012
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LAM RESEARCH CORPORATION (3)
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National University Corporation (1)
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ASM IP HOLDING B.V. (28)
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* Cited By Examiner

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