Diode having high brightness and method thereof
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United States of America Patent
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Sep 1, 2009
Grant Date -
Feb 9, 2006
app pub date -
Oct 12, 2005
filing date -
Jul 17, 2001
priority date (Note) -
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Abstract
A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
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