Semiconductor devices having polymetal gate electrodes
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United States of America Patent
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Sep 1, 2009
Grant Date -
Nov 2, 2006
app pub date -
Apr 7, 2006
filing date -
Apr 27, 2005
priority date (Note) -
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Abstract
Semiconductor devices and methods of fabricating the same are provided. A gate insulating film is provided on a semiconductor substrate. A polymetal gate electrode is provided on the gate insulating film. The polymetal gate electrode includes a conductive polysilicon film on the gate insulating film, a first metal silicide film on the conductive polysilicon film, a barrier film on the first metal silicide film, and a metal film on the barrier film. The barrier film includes a titanium nitride (TiN) film on the first metal silicide film and a buffer layer between the TiN film and the metal film.
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