Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states

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United States of America Patent

PATENT NO 7586778
APP PUB NO 20080285330A1
SERIAL NO

12134117

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and a resistance R. The logic “0” state is represented by a mathematical expression (1+f) R. The logic “1” state is represented by a mathematical expression (n+f) R. The logic “2” state is represented by a mathematical expression (1+nf) R. The logic “3” state is represented by a mathematical expression n(1+f) R.

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  • MACRONIX INTERNATIONAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ho, ChiaHua Kaoshing , TW 74 3941
Hsieh, Kuang Yeu Hsinchu , TW 65 3244
Lai, Erh-Kun Taichung , TW 259 6334

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