Method of forming apparatus having oxide films formed using atomic layer deposition
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United States of America Patent
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Sep 15, 2009
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Aug 31, 2004
filing date -
Aug 31, 2004
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Abstract
A dielectric layer containing an atomic layer deposited insulating metal oxide film having multiple metal components and a method of fabricating such a dielectric layer produce a reliable dielectric layer for use in a variety of electronic devices. Embodiments include conducting a number of annealing processes between a number of atomic layer deposition cycles for forming the metal oxide film. In an embodiment, a titanium aluminum oxide film is formed. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing an atomic layer deposited titanium aluminum oxide film, and methods for forming such structures.
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