Method for fabricating a top conductive layer in a semiconductor die and related structure
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United States of America Patent
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Sep 15, 2009
Grant Date -
N/A
app pub date -
Dec 18, 2006
filing date -
Oct 2, 2006
priority date (Note) -
Expired
status (Latency Note)
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Abstract
According to an exemplary embodiment, a method for fabricating a top conductive layer in a semiconductor die includes forming a through-wafer via opening through at least one interlayer dielectric layer in a through-wafer via region of the semiconductor die. The method further includes extending the through-wafer via opening through a substrate of the semiconductor die to reach a target depth. The method further includes forming a through-wafer via conductive layer in the through-wafer via opening, and concurrently forming the top conductive layer over an exposed top metal segment.
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