Thin silicon based substrate

United States of America Patent

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Sep 15, 2009
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Dec 11, 2008
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Aug 8, 2008
filing date
Oct 11, 2004

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Abstract

Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build up layers may be formed on the side of the base layer further from the die.

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INTEL CORPORATION

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Muthukumar, Sriram	Chandler , US	41	599
Natekar, Devendra	Chandler , US	20	608

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Thin silicon based substrate

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United States of America Patent

12221997

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PATENT NO	7589424
APP PUB NO	20080303159A1
SERIAL NO	12221997
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
September 15, 2009	US,7589424,B2 US7589424B2	GRANTED PATENT AS SECOND PUBLICATION
December 11, 2008	US,20080303159,A1 US20080303159A1	FIRST PUBLISHED PATENT APPLICATION

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12221997

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