Method for programming a flash memory device
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United States of America Patent
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Jan 5, 2010
Grant Date -
May 29, 2008
app pub date -
Dec 29, 2006
filing date -
Dec 29, 2006
priority date (Note) -
Withdrawn
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Abstract
A method for programming a flash memory device includes applying a program bias to a memory cell of a plurality of memory cells within a memory cell string. Each memory cell string comprises a source select line, a plurality of memory cells and a drain select line. A first pass bias is applied to at least one of the memory cells in a source select line direction relative to the memory cell to which the program bias has been applied. A second pass bias is applied to the memory cells in a drain select line direction relative the memory cell(s) to which the first pass bias has been applied.
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