High density hybrid MOSFET device
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United States of America Patent
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Sep 22, 2009
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N/A
app pub date -
Sep 11, 2005
filing date -
Jun 6, 2005
priority date (Note) -
Expired
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Abstract
A hybrid semiconductor power device that includes a plurality of closed power transistor cells each surrounded by a first and second trenched gates constituting substantially a closed cell and a plurality of stripe cells comprising two substantially parallel trenched gates constituting substantially an elongated stripe cell wherein the closed cells and stripe cells constituting neighboring cells sharing trenched gates disposed thereinbetween as common boundary trenched gates. The closed MOSFET cell further includes a source contact disposed substantially at a center portion of the closed cell wherein the trenched gates are maintained a critical distance (CD) away from the source contact.
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