Method and apparatus for programming nonvolatile memory

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United States of America Patent

PATENT NO 7593264
APP PUB NO 20070159887A1
SERIAL NO

11532054

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Abstract

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Embodiments of addressing the programming disturb effect are shown. A medium voltage having a magnitude between the programming voltage and ground is applied to a metal bit line among the cells that are subject to the program disturb effect.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsu, Jer-Hao Beidou Town , TW 12 45
Lee, Hsueh-Yi Hsinchu , TW 10 46
Shih, Yi Te Zhubei , TW 4 9
Wang, Yi-Ti Xinhua Town , TW 3 38

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