Programmable resistive RAM and manufacturing method

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United States of America Patent

PATENT NO 7595218
APP PUB NO 20070158690A1
SERIAL NO

11461103

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Abstract

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Programmable resistive RAM cells have a resistance that depends on the size of the programmable resistive elements. Manufacturing methods and integrated circuits for programmable resistive elements with uniform resistance are disclosed that have a cross-section of reduced size compared to the cross-section of the interlayer contacts.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDNO 16 LI HSIN ROAD SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ho, ChiaHua Kaohsiung , TW 74 3941
Hsieh, Kuang Yeu Jhubei , TW 65 3244
Lai, Erh Kun Taichung County , TW 30 766

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