Multi-level nonvolatile semiconductor memory device capable of discretely controlling a charge storage layer potential based upon accumulated electrons
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United States of America Patent
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Sep 29, 2009
Grant Date -
Feb 15, 2007
app pub date -
Jul 31, 2006
filing date -
Aug 1, 2005
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Abstract
A multi-level programmable nonvolatile semiconductor memory device comprises, a charge accumulation layer, a control gate which bias a potential to the charge accumulation layer, wherein the potential of the charge accumulation layer is controlled discretely according to the number of electrons accumulated in the charge accumulation layer.
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