Plasma-enhanced ALD of tantalum nitride films
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United States of America Patent
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Oct 6, 2009
Grant Date -
Jul 31, 2008
app pub date -
Jan 26, 2007
filing date -
Jan 26, 2007
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Abstract
Methods of controllably producing conductive tantalum nitride films are provided. The methods comprise contacting a substrate in a reaction space with alternating and sequential pulses of a tantalum source material, plasma-excited species of hydrogen and nitrogen source material. The plasma-excited species of hydrogen reduce the oxidation state of tantalum, thereby forming a substantially conductive tantalum nitride film over the substrate. In some embodiments, the plasma-excited species of hydrogen react with and removes halide residues in a deposited metallic film.
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