Thin film fuse phase change cell with thermal isolation layer and manufacturing method
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United States of America Patent
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Oct 6, 2009
Grant Date -
Dec 21, 2006
app pub date -
Aug 22, 2006
filing date -
Jun 17, 2005
priority date (Note) -
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Abstract
A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode and the top side of the second electrode. A bridge of memory material crosses the insulating member, and defines an inter-electrode path between the first and second electrodes across the insulating member. An array of such memory cells is provided. The bridge comprises an active layer of memory material on the first side having at least two solid phases and a blanket of thermal insulating material overlying the memory material having thermal conductivity less than that of an overlying electrically insulating layer.
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