Method of manufacturing flash memory device

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United States of America Patent

PATENT NO 7601589
APP PUB NO 20070059884A1
SERIAL NO

11454594

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Abstract

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The invention provides a method of manufacturing a flash memory device. Nitride film spacers are formed on sidewalls of protruded isolation films. A recess is formed in a semiconductor substrate by a self-aligned etch process using the nitride film spacers as masks. It is therefore possible to form a uniform recess over the entire wafer. Furthermore, a floating gate is formed on the semiconductor substrate including the recess in a self-aligned manner. Accordingly, a contact area between the floating gate and the semiconductor substrate can be increased as large as a recess surface area.

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Patent Owner(s)

Patent OwnerAddress
HYNIX SEMICONDUCTOR INCSAN 136-1 AMI-RI BUBAL-EUB ICH'ON KYOUNGKI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Jae Heon Icheon-si , KR 17 166

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