Method of manufacturing flash memory device
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United States of America Patent
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Oct 13, 2009
Grant Date -
Mar 15, 2007
app pub date -
Jun 16, 2006
filing date -
Sep 15, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention provides a method of manufacturing a flash memory device. Nitride film spacers are formed on sidewalls of protruded isolation films. A recess is formed in a semiconductor substrate by a self-aligned etch process using the nitride film spacers as masks. It is therefore possible to form a uniform recess over the entire wafer. Furthermore, a floating gate is formed on the semiconductor substrate including the recess in a self-aligned manner. Accordingly, a contact area between the floating gate and the semiconductor substrate can be increased as large as a recess surface area.
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