Method of grinding back surface of semiconductor wafer and semiconductor wafer grinding apparatus

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7601615
APP PUB NO 20070105343A1
SERIAL NO

11590640

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Abstract

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A semiconductor wafer back-surface grinding method, for grinding a back surface of a semiconductor wafer, an opposed front surface of the semiconductor wafer being adhered to a support base material and being provided with a circuit pattern, including: measuring an initial thickness of the semiconductor wafer before grinding, in a condition where the support base material is adhered to the front surface of the semiconductor wafer; obtaining a cutting depth by subtracting a set final thickness measured after grinding from the initial thickness; and grinding the back surface of the semiconductor wafer, based on the cutting depth.

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Patent Owner(s)

Patent OwnerAddress
TOKYO SEIMITSU CO LTDHACHIOJI-SHI TOKYO 192-8515

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hayashi, Tomoo Mitaka , JP 18 222
Nezu, Motoi Mitaka , JP 3 18

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