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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

• JAPAN SCIENCE AND TECHNOLOGY AGENCY

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Hosono, Hideo	Yokohama , JP	109	57369
Kamiya, Toshio	Yokohama , JP	36	49386
Nakagawa, Katsumi	Zama , JP	165	12503
Nomura, Kenji	Yokohama , JP	101	46051
Sano, Masafumi	Fujisawa , JP	125	20782

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
October 13, 2009	US,7601984,B2   US7601984B2	GRANTED PATENT AS SECOND PUBLICATION
May 25, 2006	US,20060108636,A1   US20060108636A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 7601984

Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator

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