Hafnium tantalum oxide dielectrics
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United States of America Patent
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Oct 13, 2009
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app pub date -
Apr 13, 2007
filing date -
Jan 5, 2005
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Abstract
A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing a hafnium tantalum oxide film structured as one or more monolayers.
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