High voltage devices
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United States of America Patent
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Oct 20, 2009
Grant Date -
Dec 20, 2007
app pub date -
Jun 16, 2006
filing date -
Jun 16, 2006
priority date (Note) -
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Abstract
High voltage devices capable of preventing leakage current caused by inversion layer. In the high voltage device, a substrate comprises an active area formed therein, a source region and a drain region formed in the substrate, and a gate structure is formed on the active area to define a channel region in the substrate between the drain region and the source region, wherein the active area has at least one side extending along a direction perpendicular to the channel direction of the channel region, such that the gate structure without completely covering the extension.
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