Image sensor and method for fabricating the same
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United States of America Patent
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Oct 27, 2009
Grant Date -
Feb 1, 2007
app pub date -
Apr 19, 2006
filing date -
Jul 11, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An image sensor and a method for fabricating the same are provided. The image sensor includes a first conductive type substrate including a trench formed in a predetermined portion of the first conductive type substrate, a second conductive type impurity region for use in a photodiode, formed below a bottom surface of the trench in the first conductive type substrate, and a first conductive type epitaxial layer for use in the photodiode, buried in the trench.
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