Bridge resistance random access memory device with a singular contact structure
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United States of America Patent
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Oct 27, 2009
Grant Date -
Nov 15, 2007
app pub date -
May 9, 2006
filing date -
May 9, 2006
priority date (Note) -
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status (Latency Note)
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Abstract
A resistance random access memory in a bridge structure is disclosed that comprises a contact structure where first and second electrodes are located within the contact structure. The first electrode has a circumferential extending shape, such as an annular shape, surrounding an inner wall of the contact structure. The second electrode is located within an interior of the circumferential extending shape and separated from the first electrode by an insulating material. A resistance memory bridge is in contact with an edge surface of the first and second electrodes. The first electrode in the contact structure is connected to a transistor and the second electrode in the contact structure is connected to a bit line. A bit line is connected to the second electrode by a self-aligning process.
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