Minimizing arcing in a plasma processing chamber

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United States of America Patent

PATENT NO 7611640
SERIAL NO

11396124

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bailey,, III Andrew D Pleasanton , US 109 2274
Berney, Butch Pleasanton , US 15 1304
Howald, Arthur M Pleasanton , US 57 1775
Kuthi, Andras Thousand Oaks , US 64 2540

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