US Patent No: 7,619,237

Number of patents in Portfolio can not be more than 2000

Programmable resistive memory cell with self-forming gap

ALSO PUBLISHED AS: 20080197333

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Abstract

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A memory device has a first electrode, a second electrode, and memory material defining an inter-electrode current path between the first electrode and the second electrode. A gap is formed by shrinkage of the shrinkable material between the memory material and a shrinkable material next to the memory material.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MACRONIX INTERNATIONAL CO., LTD.HSINCHU2339

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang-Lan Hsinchu, TW 352 5288

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SILICON STORAGE TECHNOLOGY, INC. (4)
6,867,638 High voltage generation and regulation system for digital multilevel nonvolatile memory 200 2002
6,815,704 Phase change memory device employing thermally insulating voids 244 2003
6,927,410 Memory device with discrete layers of phase change memory material 222 2003
6,937,507 Memory device and method of operating same 238 2003
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
5,166,096 Process for fabricating self-aligned contact studs for semiconductor structures 311 1992
6,936,840 Phase-change memory cell and method of fabricating the phase-change memory cell 208 2004
 
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (1)
6,605,821 Phase change material electronic memory structure and method for forming 223 2002
 
SPANSION LLC (1)
6,639,849 Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell 269 2003
 
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. (2)
6,589,714 Method for making programmable resistance memory element using silylated photoresist 375 2001
6,613,604 Method for making small pore for use in programmable resistance memory element 390 2001
 
MICRON TECHNOLOGY, INC. (5)
5,837,564 Method for optimal crystallization to obtain high electrical performance from chalcogenides 256 1995
6,605,527 Reduced area intersection between electrode and programming element 373 2001
6,586,761 Phase change material memory device 412 2001
6,861,267 Reducing shunts in memories with phase-change material 201 2001
6,864,500 Programmable conductor memory cell structure 213 2002
 
SAMSUNG ELECTRONICS CO., LTD. (4)
6,621,095 Method to enhance performance of thermal resistor device 380 2001
6,894,305 Phase-change memory devices with a self-heater structure 226 2004
7,042,001 Phase change memory devices including memory elements having variable cross-sectional areas 187 2004
2005/0215,009 Methods of forming phase-change memory devices 199 2005
 
The Procter & Gamble Company (1)
7,132,675 Programmable conductor memory cell structure and method therefor 172 2004
 
RICOH COMPANY, LTD. (1)
6,280,684 Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium 215 2000
 
ENPLAS CORPORATION (1)
6,805,563 Socket for electrical parts 90 2003
 
DAI NIPPON PRINTING CO., LTD. (1)
6,859,389 Phase change-type memory element and process for producing the same 183 2003
 
SPANSION ISRAEL LTD (1)
6,992,932 Method circuit and system for read error detection in a non-volatile memory array 295 2003
 
ROUND ROCK RESEARCH, LLC (29)
5,789,758 Chalcogenide memory cell with a plurality of chalcogenide electrodes 350 1995
5,869,843 Memory array having a multi-state element and method for forming such array or cells thereof 377 1995
5,879,955 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 273 1995
6,420,725 Method and apparatus for forming an integrated circuit electrode having a reduced contact area 372 1995
6,025,220 Method of forming a polysilicon diode and devices incorporating such diode 224 1996
5,789,277 Method of making chalogenide memory device 478 1996
5,814,527 Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories 396 1996
5,831,276 Three-dimensional container diode for use with multi-state material in a non-volatile memory cell 259 1996
5,998,244 Memory cell incorporating a chalcogenide element and method of making same 310 1996
6,147,395 Method for fabricating a small area of contact between electrodes 252 1996
6,117,720 Method of making an integrated circuit electrode having a reduced contact area 431 1997
5,985,698 Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell 210 1997
6,236,059 Memory cell incorporating a chalcogenide element and method of making same 414 1997
5,952,671 Small electrode for a chalcogenide switching device and method for fabricating same 262 1997
6,031,287 Contact structure and memory element incorporating the same 455 1997
6,150,253 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same 260 1997
5,970,336 Method of making memory cell incorporating a chalcogenide element 277 1997
6,111,264 Small pores defined by a disposable internal spacer for use in chalcogenide memories 262 1997
5,920,788 Chalcogenide memory cell with a plurality of chalcogenide electrodes 483 1997
6,077,729 Memory array having a multi-state element and method for forming such array or cellis thereof 416 1999
6,104,038 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 215 1999
6,114,713 Integrated circuit memory cell having a small active area and method of forming same 244 1999
6,189,582 Small electrode for a chalcogenide switching device and method for fabricating same 245 1999
6,153,890 Memory cell incorporating a chalcogenide element 258 1999
6,287,887 Method for fabricating a small area of contact between electrodes 211 2000
6,462,353 Method for fabricating a small area of contact between electrodes 214 2000
6,563,156 Memory elements and methods for making same 205 2001
6,423,621 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same 222 2001
6,607,974 Method of forming a contact structure in a semiconductor device 210 2001
 
QIMONDA AG (1)
6,420,216 Fuse processing using dielectric planarization pillars 207 2000
 
NXP B.V. (1)
* 2006/0163,554 Electric device comprising phase change material 87 2003
 
MACRONIX INTERNATIONAL CO., LTD. (8)
6,177,317 Method of making nonvolatile memory devices having reduced resistance diffusion regions 220 1999
6,271,090 Method for manufacturing flash memory device with dual floating gates and two bits per cell 215 2000
6,320,786 Method of controlling multi-state NROM 304 2001
6,487,114 Method of reading two-bit memories of NROM cell 253 2001
6,579,760 Self-aligned, programmable phase change memory 282 2002
6,864,503 Spacer chalcogenide memory method and device 220 2002
* 7,449,710 Vacuum jacket for phase change memory element 87 2006
* 2007/0126,040 Vacuum cell thermal isolation for a phase change memory device 163 2006
 
INTEL CORPORATION (8)
6,501,111 Three-dimensional (3D) programmable device 405 2000
6,429,064 Reduced contact area of sidewall conductor 381 2000
6,555,860 Compositionally modified resistive electrode 359 2001
6,512,241 Phase change material memory device 402 2001
6,597,009 Reduced contact area of sidewall conductor 376 2002
6,744,088 Phase change memory device on a planar composite layer 243 2002
6,791,102 Phase change memory 241 2002
6,797,979 Metal structure for a phase-change memory device 209 2003
 
ACTEL CORPORATION (1)
4,876,220 Method of making programmable low impedance interconnect diode element 425 1987
 
ENERGY CONVERSION DEVICES, INC. (3)
4,599,705 Programmable cell for use in programmable electronic arrays 336 1984
4,719,594 Grooved optical data storage device including a chalcogenide memory layer 252 1985
5,687,112 Multibit single cell memory element having tapered contact 504 1996
 
SANDISK 3D LLC (6)
6,185,122 Vertically stacked field programmable nonvolatile memory and method of fabrication 520 1999
6,351,406 Vertically stacked field programmable nonvolatile memory and method of fabrication 281 2000
6,627,530 Patterning three dimensional structures 249 2000
6,420,215 Three-dimensional memory array and method of fabrication 560 2001
6,888,750 Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication 276 2001
6,483,736 Vertically stacked field programmable nonvolatile memory and method of fabrication 280 2001
 
TEXAS INSTRUMENTS INCORPORATED (1)
6,545,903 Self-aligned resistive plugs for forming memory cell with phase change material 232 2001
 
OVONYX, INC. (17)
5,166,758 Electrically erasable phase change memory 587 1991
5,177,567 Thin-film structure for chalcogenide electrical switching devices and process therefor 535 1991
5,534,712 Electrically erasable memory elements characterized by reduced current and improved thermal stability 447 1995
6,087,674 Memory element with memory material comprising phase-change material and dielectric material 540 1998
RE37259 Multibit single cell memory element having tapered contact 446 1999
6,314,014 Programmable resistance memory arrays with reference cells 305 1999
6,339,544 Method to enhance performance of thermal resistor device 405 2000
6,567,293 Single level metal memory cell using chalcogenide cladding 379 2000
6,617,192 Electrically programmable memory element with multi-regioned contact 234 2000
6,534,781 Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact 381 2000
6,514,788 Method for manufacturing contacts for a Chalcogenide memory device 211 2001
6,511,867 Utilizing atomic layer deposition for programmable device 377 2001
6,673,700 Reduced area intersection between electrode and programming element 367 2001
6,566,700 Carbon-containing interfacial layer for phase-change memory 400 2001
6,593,176 METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTACT 383 2002
6,909,107 Method for manufacturing sidewall contacts for a chalcogenide memory device 188 2004
6,933,516 Forming tapered lower electrode phase-change memories 201 2004
 
SAIFUN SEMICONDUCTORS LTD. (1)
6,011,725 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping 1041 1999
 
RHOMBUS, INC. (1)
6,034,882 Vertically stacked field programmable nonvolatile memory and method of fabrication 902 1998
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (2)
* 8,270,205 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods forming the same 1 2009
8,717,799 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same 0 2012
 
HYNIX SEMICONDUCTOR INC. (1)
* 7,807,478 Nonvolatile memory device and fabrication method thereof 1 2010
* Cited By Examiner

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