US Patent No: 7,619,237

Number of patents in Portfolio can not be more than 2000

Programmable resistive memory cell with self-forming gap

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ALSO PUBLISHED AS: 20080197333
ATTORNEY / AGENT: (SPONSORED)
 

Importance

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Abstract

A memory device has a first electrode, a second electrode, and memory material defining an inter-electrode current path between the first electrode and the second electrode. A gap is formed by shrinkage of the shrinkable material between the memory material and a shrinkable material next to the memory material.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MACRONIX INTERNATIONAL CO., LTD.HSINCHU1945

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang-Lan Hsinchu, TW 296 3731

Cited Art

Patent Info (Count) # Cites Year
 
ROUND ROCK RESEARCH, LLC (29)
5,789,758 Chalcogenide memory cell with a plurality of chalcogenide electrodes 326 1995
5,869,843 Memory array having a multi-state element and method for forming such array or cells thereof 346 1995
5,879,955 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 249 1995
6,420,725 Method and apparatus for forming an integrated circuit electrode having a reduced contact area 344 1995
6,025,220 Method of forming a polysilicon diode and devices incorporating such diode 203 1996
5,789,277 Method of making chalogenide memory device 445 1996
5,814,527 Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories 367 1996
5,831,276 Three-dimensional container diode for use with multi-state material in a non-volatile memory cell 234 1996
5,998,244 Memory cell incorporating a chalcogenide element and method of making same 259 1996
6,147,395 Method for fabricating a small area of contact between electrodes 233 1996
6,117,720 Method of making an integrated circuit electrode having a reduced contact area 404 1997
5,985,698 Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell 191 1997
6,236,059 Memory cell incorporating a chalcogenide element and method of making same 388 1997
5,952,671 Small electrode for a chalcogenide switching device and method for fabricating same 234 1997
6,031,287 Contact structure and memory element incorporating the same 424 1997
6,150,253 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same 236 1997
5,970,336 Method of making memory cell incorporating a chalcogenide element 257 1997
6,111,264 Small pores defined by a disposable internal spacer for use in chalcogenide memories 239 1997
5,920,788 Chalcogenide memory cell with a plurality of chalcogenide electrodes 449 1997
6,077,729 Memory array having a multi-state element and method for forming such array or cellis thereof 387 1999
6,104,038 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 195 1999
6,114,713 Integrated circuit memory cell having a small active area and method of forming same 219 1999
6,189,582 Small electrode for a chalcogenide switching device and method for fabricating same 226 1999
6,153,890 Memory cell incorporating a chalcogenide element 239 1999
6,287,887 Method for fabricating a small area of contact between electrodes 193 2000
6,462,353 Method for fabricating a small area of contact between electrodes 193 2000
6,563,156 Memory elements and methods for making same 185 2001
6,423,621 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same 202 2001
6,607,974 Method of forming a contact structure in a semiconductor device 192 2001
 
OVONYX, INC. (17)
5,166,758 Electrically erasable phase change memory 536 1991
5,177,567 Thin-film structure for chalcogenide electrical switching devices and process therefor 505 1991
5,534,712 Electrically erasable memory elements characterized by reduced current and improved thermal stability 420 1995
6,087,674 Memory element with memory material comprising phase-change material and dielectric material 489 1998
RE37259 Multibit single cell memory element having tapered contact 409 1999
6,314,014 Programmable resistance memory arrays with reference cells 283 1999
6,339,544 Method to enhance performance of thermal resistor device 378 2000
6,567,293 Single level metal memory cell using chalcogenide cladding 353 2000
6,617,192 Electrically programmable memory element with multi-regioned contact 209 2000
6,534,781 Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact 355 2000
6,514,788 Method for manufacturing contacts for a Chalcogenide memory device 191 2001
6,511,867 Utilizing atomic layer deposition for programmable device 352 2001
6,673,700 Reduced area intersection between electrode and programming element 341 2001
6,566,700 Carbon-containing interfacial layer for phase-change memory 372 2001
6,593,176 METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTACT 355 2002
6,909,107 Method for manufacturing sidewall contacts for a chalcogenide memory device 171 2004
6,933,516 Forming tapered lower electrode phase-change memories 182 2004
 
INTEL CORPORATION (8)
6,501,111 Three-dimensional (3D) programmable device 371 2000
6,429,064 Reduced contact area of sidewall conductor 352 2000
6,555,860 Compositionally modified resistive electrode 333 2001
6,512,241 Phase change material memory device 370 2001
6,597,009 Reduced contact area of sidewall conductor 349 2002
6,744,088 Phase change memory device on a planar composite layer 213 2002
6,791,102 Phase change memory 216 2002
6,797,979 Metal structure for a phase-change memory device 191 2003
 
MACRONIX INTERNATIONAL CO., LTD. (8)
6,177,317 Method of making nonvolatile memory devices having reduced resistance diffusion regions 199 1999
6,271,090 Method for manufacturing flash memory device with dual floating gates and two bits per cell 196 2000
6,320,786 Method of controlling multi-state NROM 282 2001
6,487,114 Method of reading two-bit memories of NROM cell 232 2001
6,579,760 Self-aligned, programmable phase change memory 239 2002
6,864,503 Spacer chalcogenide memory method and device 200 2002
7,449,710 Vacuum jacket for phase change memory element 77 2006
2007/0126,040 Vacuum cell thermal isolation for a phase change memory device 145 2006
 
SANDISK 3D LLC (6)
6,185,122 Vertically stacked field programmable nonvolatile memory and method of fabrication 458 1999
6,351,406 Vertically stacked field programmable nonvolatile memory and method of fabrication 242 2000
6,627,530 Patterning three dimensional structures 207 2000
6,420,215 Three-dimensional memory array and method of fabrication 439 2001
6,888,750 Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication 239 2001
6,483,736 Vertically stacked field programmable nonvolatile memory and method of fabrication 248 2001
 
MICRON TECHNOLOGY, INC. (5)
5,837,564 Method for optimal crystallization to obtain high electrical performance from chalcogenides 236 1995
6,605,527 Reduced area intersection between electrode and programming element 348 2001
6,586,761 Phase change material memory device 381 2001
6,861,267 Reducing shunts in memories with phase-change material 183 2001
6,864,500 Programmable conductor memory cell structure 191 2002
 
SAMSUNG ELECTRONICS CO., LTD. (4)
6,621,095 Method to enhance performance of thermal resistor device 353 2001
6,894,305 Phase-change memory devices with a self-heater structure 205 2004
7,042,001 Phase change memory devices including memory elements having variable cross-sectional areas 168 2004
2005/0215,009 Methods of forming phase-change memory devices 181 2005
 
SILICON STORAGE TECHNOLOGY, INC. (4)
6,867,638 High voltage generation and regulation system for digital multilevel nonvolatile memory 182 2002
6,815,704 Phase change memory device employing thermally insulating voids 219 2003
6,927,410 Memory device with discrete layers of phase change memory material 201 2003
6,937,507 Memory device and method of operating same 207 2003
 
ENERGY CONVERSION DEVICES, INC. (3)
4,599,705 Programmable cell for use in programmable electronic arrays 308 1984
4,719,594 Grooved optical data storage device including a chalcogenide memory layer 231 1985
5,687,112 Multibit single cell memory element having tapered contact 454 1996
 
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. (2)
6,589,714 Method for making programmable resistance memory element using silylated photoresist 348 2001
6,613,604 Method for making small pore for use in programmable resistance memory element 361 2001
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
5,166,096 Process for fabricating self-aligned contact studs for semiconductor structures 281 1992
6,936,840 Phase-change memory cell and method of fabricating the phase-change memory cell 189 2004
 
SAIFUN SEMICONDUCTORS LTD. (2)
6,011,725 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping 925 1999
6,992,932 Method circuit and system for read error detection in a non-volatile memory array 249 2003
 
ACTEL CORPORATION (1)
4,876,220 Method of making programmable low impedance interconnect diode element 396 1987
 
DAI NIPPON PRINTING CO., LTD. (1)
6,859,389 Phase change-type memory element and process for producing the same 166 2003
 
ENPLAS CORPORATION (1)
6,805,563 Socket for electrical parts 82 2003
 
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (1)
6,605,821 Phase change material electronic memory structure and method for forming 199 2002
 
NXP B.V. (1)
2006/0163,554 Electric device comprising phase change material 77 2003
 
QIMONDA AG (1)
6,420,216 Fuse processing using dielectric planarization pillars 188 2000
 
RHOMBUS, INC. (1)
6,034,882 Vertically stacked field programmable nonvolatile memory and method of fabrication 736 1998
 
RICOH COMPANY, LTD. (1)
6,280,684 Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium 195 2000
 
SPANSION LLC (1)
6,639,849 Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell 245 2003
 
TEXAS INSTRUMENTS INCORPORATED (1)
6,545,903 Self-aligned resistive plugs for forming memory cell with phase change material 213 2001
 
THE PROCTER & GAMBLE COMPANY (1)
7,132,675 Programmable conductor memory cell structure and method therefor 155 2004

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
HYNIX SEMICONDUCTOR INC. (1)
7,807,478 Nonvolatile memory device and fabrication method thereof 1 2010
 
MICRON TECHNOLOGY, INC. (1)
8,270,205 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods forming the same 0 2009

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