Programmable resistive memory cell with self-forming gap

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO

7619237

APP PUB NO

20080197333A1

SERIAL NO

11677392

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A memory device has a first electrode, a second electrode, and memory material defining an inter-electrode current path between the first electrode and the second electrode. A gap is formed by shrinkage of the shrinkable material between the memory material and a shrinkable material next to the memory material.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MACRONIX INTERNATIONAL CO., LTD.HSINCHU2721

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang-Lan Elmsford , US 240 6307

Cited Art Landscape

Patent Info (Count) # Cites Year
 
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MICRON TECHNOLOGY, INC. (4)
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SAMSUNG ELECTRONICS CO., LTD. (4)
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NXP B.V. (1)
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GLOBALFOUNDRIES INC. (1)
6936840 Phase-change memory cell and method of fabricating the phase-change memory cell 212 2004
 
OVONYX MEMORY TECHNOLOGY, LLC (16)
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6314014 Programmable resistance memory arrays with reference cells 310 1999
6339544 Method to enhance performance of thermal resistor device 412 2000
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The Procter & Gamble Company (1)
7132675 Programmable conductor memory cell structure and method therefor 175 2004
 
RICOH COMPANY, LTD. (1)
6280684 Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium 219 2000
 
ENPLAS CORPORATION (1)
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ROUND ROCK RESEARCH, LLC (29)
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5879955 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 277 1995
6420725 Method and apparatus for forming an integrated circuit electrode having a reduced contact area 379 1995
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5998244 Memory cell incorporating a chalcogenide element and method of making same 331 1996
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QIMONDA AG (1)
6420216 Fuse processing using dielectric planarization pillars 211 2000
 
SANDISK TECHNOLOGIES LLC (6)
6185122 Vertically stacked field programmable nonvolatile memory and method of fabrication 554 1999
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6627530 Patterning three dimensional structures 272 2000
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6483736 Vertically stacked field programmable nonvolatile memory and method of fabrication 291 2001
 
MACRONIX INTERNATIONAL CO., LTD. (8)
6177317 Method of making nonvolatile memory devices having reduced resistance diffusion regions 224 1999
6271090 Method for manufacturing flash memory device with dual floating gates and two bits per cell 219 2000
6320786 Method of controlling multi-state NROM 310 2001
6487114 Method of reading two-bit memories of NROM cell 259 2001
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* 2007/0126,040 Vacuum cell thermal isolation for a phase change memory device 166 2006
 
INTEL CORPORATION (8)
6501111 Three-dimensional (3D) programmable device 413 2000
6429064 Reduced contact area of sidewall conductor 388 2000
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6744088 Phase change memory device on a planar composite layer 248 2002
6791102 Phase change memory 249 2002
6797979 Metal structure for a phase-change memory device 213 2003
 
TEXAS INSTRUMENTS INCORPORATED (1)
6545903 Self-aligned resistive plugs for forming memory cell with phase change material 236 2001
 
SAIFUN SEMICONDUCTORS LTD. (1)
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OVONYX, INC. (4)
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RHOMBUS, INC. (1)
6034882 Vertically stacked field programmable nonvolatile memory and method of fabrication 1003 1998
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
U.S. BANK NATIONAL ASSOCIATION (1)
* 2010/0001,250 VARIABLE RESISTANCE MEMORY DEVICE WITH AN INTERFACIAL ADHESION HEATING LAYER, SYSTEMS USING THE SAME AND METHODS FORMING THE SAME 0 2009
 
IRRESISTIBLE MATERIALS LTD (1)
9256126 Methanofullerenes 0 2013
 
MICRON TECHNOLOGY, INC. (2)
* 8270205 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods forming the same 1 2009
8717799 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same 0 2012
 
HYNIX SEMICONDUCTOR INC. (1)
* 7807478 Nonvolatile memory device and fabrication method thereof 1 2010
* Cited By Examiner

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