US Patent No: 7,619,237

Number of patents in Portfolio can not be more than 2000

Programmable resistive memory cell with self-forming gap

ALSO PUBLISHED AS: 20080197333

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Abstract

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A memory device has a first electrode, a second electrode, and memory material defining an inter-electrode current path between the first electrode and the second electrode. A gap is formed by shrinkage of the shrinkable material between the memory material and a shrinkable material next to the memory material.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MACRONIX INTERNATIONAL CO., LTD.HSINCHU2150

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang-Lan Hsinchu, TW 328 4511

Cited Art Landscape

Patent Info (Count) # Cites Year
 
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6,420,725 Method and apparatus for forming an integrated circuit electrode having a reduced contact area 361 1995
6,025,220 Method of forming a polysilicon diode and devices incorporating such diode 214 1996
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5,814,527 Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories 384 1996
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5,998,244 Memory cell incorporating a chalcogenide element and method of making same 283 1996
6,147,395 Method for fabricating a small area of contact between electrodes 242 1996
6,117,720 Method of making an integrated circuit electrode having a reduced contact area 420 1997
5,985,698 Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell 200 1997
6,236,059 Memory cell incorporating a chalcogenide element and method of making same 404 1997
5,952,671 Small electrode for a chalcogenide switching device and method for fabricating same 251 1997
6,031,287 Contact structure and memory element incorporating the same 444 1997
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5,970,336 Method of making memory cell incorporating a chalcogenide element 268 1997
6,111,264 Small pores defined by a disposable internal spacer for use in chalcogenide memories 252 1997
5,920,788 Chalcogenide memory cell with a plurality of chalcogenide electrodes 469 1997
6,077,729 Memory array having a multi-state element and method for forming such array or cellis thereof 404 1999
6,104,038 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 205 1999
6,114,713 Integrated circuit memory cell having a small active area and method of forming same 234 1999
6,189,582 Small electrode for a chalcogenide switching device and method for fabricating same 236 1999
6,153,890 Memory cell incorporating a chalcogenide element 249 1999
6,287,887 Method for fabricating a small area of contact between electrodes 202 2000
6,462,353 Method for fabricating a small area of contact between electrodes 203 2000
6,563,156 Memory elements and methods for making same 196 2001
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6,607,974 Method of forming a contact structure in a semiconductor device 201 2001
 
OVONYX, INC. (17)
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RE37259 Multibit single cell memory element having tapered contact 428 1999
6,314,014 Programmable resistance memory arrays with reference cells 295 1999
6,339,544 Method to enhance performance of thermal resistor device 394 2000
6,567,293 Single level metal memory cell using chalcogenide cladding 368 2000
6,617,192 Electrically programmable memory element with multi-regioned contact 220 2000
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6,514,788 Method for manufacturing contacts for a Chalcogenide memory device 201 2001
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6,593,176 METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTACT 371 2002
6,909,107 Method for manufacturing sidewall contacts for a chalcogenide memory device 180 2004
6,933,516 Forming tapered lower electrode phase-change memories 192 2004
 
INTEL CORPORATION (8)
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6,429,064 Reduced contact area of sidewall conductor 369 2000
6,555,860 Compositionally modified resistive electrode 347 2001
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6,791,102 Phase change memory 229 2002
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MACRONIX INTERNATIONAL CO., LTD. (8)
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6,579,760 Self-aligned, programmable phase change memory 262 2002
6,864,503 Spacer chalcogenide memory method and device 210 2002
7,449,710 Vacuum jacket for phase change memory element 83 2006
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SANDISK 3D LLC (6)
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MICRON TECHNOLOGY, INC. (5)
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SAMSUNG ELECTRONICS CO., LTD. (4)
6,621,095 Method to enhance performance of thermal resistor device 370 2001
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2005/0215,009 Methods of forming phase-change memory devices 190 2005
 
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INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
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DAI NIPPON PRINTING CO., LTD. (1)
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ENPLAS CORPORATION (1)
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HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (1)
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NXP B.V. (1)
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QIMONDA AG (1)
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RHOMBUS, INC. (1)
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RICOH COMPANY, LTD. (1)
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SPANSION LLC (1)
6,639,849 Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell 257 2003
 
TEXAS INSTRUMENTS INCORPORATED (1)
6,545,903 Self-aligned resistive plugs for forming memory cell with phase change material 223 2001
 
The Procter & Gamble Company (1)
7,132,675 Programmable conductor memory cell structure and method therefor 163 2004

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (2)
8,270,205 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods forming the same 1 2009
8,717,799 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same 0 2012
 
HYNIX SEMICONDUCTOR INC. (1)
7,807,478 Nonvolatile memory device and fabrication method thereof 1 2010

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