US Patent No: 7,619,237

Number of patents in Portfolio can not be more than 2000

Programmable resistive memory cell with self-forming gap

ALSO PUBLISHED AS: 20080197333

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Abstract

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A memory device has a first electrode, a second electrode, and memory material defining an inter-electrode current path between the first electrode and the second electrode. A gap is formed by shrinkage of the shrinkable material between the memory material and a shrinkable material next to the memory material.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MACRONIX INTERNATIONAL CO., LTD.HSINCHU2200

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang-Lan Hsinchu, TW 335 4773

Cited Art Landscape

Patent Info (Count) # Cites Year
 
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6,025,220 Method of forming a polysilicon diode and devices incorporating such diode 217 1996
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6,117,720 Method of making an integrated circuit electrode having a reduced contact area 423 1997
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6,111,264 Small pores defined by a disposable internal spacer for use in chalcogenide memories 255 1997
5,920,788 Chalcogenide memory cell with a plurality of chalcogenide electrodes 474 1997
6,077,729 Memory array having a multi-state element and method for forming such array or cellis thereof 408 1999
6,104,038 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 208 1999
6,114,713 Integrated circuit memory cell having a small active area and method of forming same 238 1999
6,189,582 Small electrode for a chalcogenide switching device and method for fabricating same 239 1999
6,153,890 Memory cell incorporating a chalcogenide element 252 1999
6,287,887 Method for fabricating a small area of contact between electrodes 205 2000
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OVONYX, INC. (17)
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RE37259 Multibit single cell memory element having tapered contact 435 1999
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6,617,192 Electrically programmable memory element with multi-regioned contact 224 2000
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6,593,176 METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTACT 375 2002
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INTEL CORPORATION (8)
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6,429,064 Reduced contact area of sidewall conductor 372 2000
6,555,860 Compositionally modified resistive electrode 351 2001
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MACRONIX INTERNATIONAL CO., LTD. (8)
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7,449,710 Vacuum jacket for phase change memory element 85 2006
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SANDISK 3D LLC (6)
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SAMSUNG ELECTRONICS CO., LTD. (4)
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ENPLAS CORPORATION (1)
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HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (1)
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NXP B.V. (1)
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QIMONDA AG (1)
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RHOMBUS, INC. (1)
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RICOH COMPANY, LTD. (1)
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SPANSION LLC (1)
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TEXAS INSTRUMENTS INCORPORATED (1)
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The Procter & Gamble Company (1)
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Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (2)
8,270,205 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods forming the same 1 2009
8,717,799 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same 0 2012
 
HYNIX SEMICONDUCTOR INC. (1)
7,807,478 Nonvolatile memory device and fabrication method thereof 1 2010

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