Method of patterning mechanical layer for MEMS structures

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United States of America Patent

PATENT NO 7625825
APP PUB NO 20080310008A1
SERIAL NO

11763234

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of making a microelectromechanical system (MEMS) device is disclosed. The method includes forming a stationary layer over a substrate. A sacrificial layer is formed over the stationary layer. The sacrificial layer is formed of a first material. A mechanical layer is formed over the sacrificial layer. A hard mask layer is formed over the mechanical layer. The hard mask layer is formed of a second material. The first and second materials are etchable by a single etchant which is substantially selective for etching the first and second materials relative to the mechanical layer. The hard mask layer is patterned after forming the hard mask layer. Subsequently, the mechanical layer is etched through the patterned hard mask layer. The patterned hard mask layer is removed simultaneously with the sacrificial layer after etching the mechanical layer.

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Patent Owner(s)

  • SNAPTRACK, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chan, Wen-Sheng Jhubei , TW 4 14

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