Method for fabricating CMOS image sensor with plasma damage-free photodiode
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United States of America Patent
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Dec 8, 2009
Grant Date -
Nov 1, 2007
app pub date -
Mar 28, 2007
filing date -
Apr 28, 2006
priority date (Note) -
Expired
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Abstract
A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor includes providing a semi-finished substrate, forming a patterned blocking layer over a photodiode region of the substrate, implanting impurities on regions other than the photodiode region using a mask while the patterned blocking layer remains, and removing the mask.
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