Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

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United States of America Patent

PATENT NO 7629625
APP PUB NO 20080090390A1
SERIAL NO

11984944

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Abstract

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The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

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Patent Owner(s)

Patent OwnerAddress
JX NIPPON MINING & METALS CORPORATION1-2 OTEMACHI 1-CHOME CHIYODA-KU TOKYO 100-8164

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arakawa, Atsutoshi Kitaibaraki , JP 27 217
Asahi, Toshiaki Saitama , JP 16 55
Sato, Kenji Takasaki , JP 446 3401
Yamamoto, Tetsuya Kochi , JP 379 6717

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