Systems for programming multilevel cell nonvolatile memory

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United States of America Patent

PATENT NO 7630252
APP PUB NO 20080316816A1
SERIAL NO

11767611

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Abstract

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A memory system includes a first block in which data is stored with a low density and a second block in which data is stored with a high density. When data is received it is written to the first block, and in parallel some of the data is written to the second block, so that the second block is partially programmed. The second block is later fully programmed by copying additional data from the first block.

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Patent Owner(s)

Patent OwnerAddress
SANDISK TECHNOLOGIES INC951 SANDISK DRIVE LEGAL DEP MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Jason T Santa Clara , US 28 825

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