Method of refining scrap silicon using an electron beam

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United States of America Patent

PATENT NO 7632329
APP PUB NO 20060016290A1
SERIAL NO

11142679

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Abstract

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A method of refining scrap silicon using an electron beam includes a step of selectively preparing lumps of n-type scrap silicon containing a specific impurity element as a dopant, a step of crushing the prepared lumps of scrap silicon, a step of placing the crushed silicon into a vacuum vessel, a step of irradiating the crushed silicon which was placed into the vacuum vessel with an electron beam to melt it and vaporize at least a portion of the impurity element, and a step of solidifying the resulting silicon.

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Patent Owner(s)

Patent OwnerAddress
IIS MATERIALS CORPORATION LTD1-32-20 KOMABA MEGURO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shimada, Takehiko Yokohama , JP 21 90
Yamauchi, Norichika Ichihara , JP 8 20

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