Method and apparatus for atomic layer deposition (ALD) in a proximity system
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United States of America Patent
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Dec 15, 2009
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N/A
app pub date -
Jun 30, 2005
filing date -
Sep 30, 2002
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Abstract
An apparatus for processing a substrate is provided which includes a first process window configured to apply a first fluid meniscus between the first process window and a surface of the substrate. The apparatus further includes a second process window configured to generate a second fluid meniscus between the second process window and the surface of the substrate. The apparatus further includes a third process window configured to generate a third fluid meniscus between the third process window and the surface of the substrate. The apparatus is configured to apply the first fluid meniscus, the second fluid meniscus, and the third fluid meniscus to the surface of the substrate in order during an atomic layer deposition operation.
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