Antireflective hardmask composition and methods for using same
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United States of America Patent
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Dec 15, 2009
Grant Date -
Jan 4, 2007
app pub date -
Dec 12, 2005
filing date -
Jun 17, 2005
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Abstract
Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer mixture including a first polymer that includes one or more of the following monomeric units ##STR00001## wherein A is a bivalent radical selected from the group consisting of carbonyl, oxy, alkylene, fluoroalkylene, phenyldioxy, and any combination thereof; R.sub.1 and R.sub.2 are each independently a bivalent radical selected from the group consisting of an alkylene, an arylene, and any combination thereof; and x, y, and z are 0 or integers; and a second polymer including an aryl group; (b) a crosslinking component; and (c) an acid catalyst.
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