Semiconductor device and method for fabricating the same
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United States of America Patent
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Dec 15, 2009
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app pub date -
Dec 27, 2006
filing date -
Dec 28, 2005
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Abstract
A method of fabricating a semiconductor device consistent with the present invention, the method comprising: forming an insulation film on a substrate; forming a mono-atomic layer of barrier ions at the insulation film; forming a gate insulation film in which the barrier ions are stabilized by an annealing process; forming a gate electrode on the gate insulation film; forming a spacer at a side surface of the gate electrode; and forming source/drain impurity regions at a side surface of the gate electrode.
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