Growth of III-nitride light emitting devices on textured substrates
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United States of America Patent
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Dec 15, 2009
Grant Date -
Mar 23, 2006
app pub date -
Sep 23, 2004
filing date -
Sep 23, 2004
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Abstract
A III-nitride light emitting device is grown on a textured substrate, in order to reduce the amount of total internal reflection at the interface between the substrate and the III-nitride layers. In some embodiments, the device includes a first growth region substantially free of voids, and a second growth region that improves the material quality such that high quality layers can be grown over the first and second regions.
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