Field-effect-transistor multiplexing/demultiplexing architectures

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United States of America Patent

PATENT NO 7633098
APP PUB NO 20070241413A1
SERIAL NO

11765374

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Abstract

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This disclosure relates to field-effect-transistor (FET) multiplexing/demultiplexing architectures and methods for fabricating them. One of these FET multiplexing/demultiplexing architectures enables decoding of an array of tightly pitched conductive structures. Another enables efficient decoding of various types of conductive-structure arrays, tightly pitched or otherwise. Also, processes for forming FET multiplexing/demultiplexing architectures are disclosed that use alignment-independent processing steps. One of these processes uses one, low-accuracy imprinting step and further alignment-independent processing steps.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Komilovich, Pavel Corvallis , US 5 10
Yang, Xiaofeng Corvallis , US 84 558

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