Reduced leakage driver circuit and memory device employing same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7633830
APP PUB NO 20090141580A1
SERIAL NO

11947210

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A row line driver circuit for use in a memory array including multiple memory cells and multiple row lines coupled to the memory cells for selectively accessing the memory cells includes an output stage adapted for connection to a corresponding one of the row lines and a control circuit connected to the output stage. The output stage is operative during an active phase of a given memory cycle to drive the corresponding row line to a potential as a function of at least one address signal received by the driver circuit. The control circuit is operative to generate at least one control signal for disabling the output stage at least during an inactive phase of the memory cycle to thereby substantially eliminate a leakage current path in the driver circuit.

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Patent Owner(s)

Patent OwnerAddress
AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE LIMITED1 YISHUN AVENUE 7 SINGAPORE 768923

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Evans, Donald Albert Lancaster , US 25 180
McPartland, Richard J Nazareth , US 34 671
Pham, Hai Quang Hatfield , US 25 207
Werner, Wayne E Coopersburg , US 35 629
Wozniak, Ronald James Allentown , US 12 105

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