Image sensor and method for fabricating the same
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United States of America Patent
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Dec 29, 2009
Grant Date -
Mar 1, 2007
app pub date -
Aug 24, 2006
filing date -
Aug 26, 2005
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of the image sensor, a trench is formed in a substrate through a STI process, and a channel stop layer is formed over the substrate in the trench. An isolation structure is formed in the trench, and a photodiode is formed in the substrate adjacent to a sidewall of the trench.
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