Method for manufacturing a laterally diffused metal oxide semiconductor device
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United States of America Patent
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Dec 29, 2009
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N/A
app pub date -
Jan 4, 2001
filing date -
Jan 5, 2000
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Abstract
A laterally diffused metal oxide semiconductor (LDMOS) device and a method of manufacture therefor. The method of manufacturing the LDMOS device includes forming an amorphous region in a semiconductor substrate between isolation structures and adjacent a gate structure, by implanting an amorphizing element, such as silicon or germanium, in the semiconductor substrate. The method further includes diffusing a channel dopant laterally in the amorphous region, to form a first portion of a channel.
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