Double density NROM with nitride strips (DDNS)
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United States of America Patent
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Dec 29, 2009
Grant Date -
Aug 30, 2007
app pub date -
Dec 28, 2006
filing date -
Feb 28, 2006
priority date (Note) -
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Abstract
An NVM cell such as an NROM cell is formed using a portion of one ONO stack and an adjacent portion of a neighboring NROM stack. A gate structure is formed between (and atop) the two ONO portions, or “strips” (or “stripes”). This provides having two physically separated charge storage regions (nitride “strips”, or “stripes”) in each memory cell.
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