Non-volatile memory structure and method of fabrication
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United States of America Patent
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Dec 29, 2009
Grant Date -
Sep 21, 2006
app pub date -
May 24, 2006
filing date -
Oct 14, 2004
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Abstract
A method for creating a non-volatile memory array includes implanting pocket implants in a substrate at least between mask columns of a given width and at least through an ONO layer covering the substrate, generating increased-width polysilicon columns from the mask columns, generating bit lines in the substrate at least between the increased-width polysilicon columns and depositing oxide at least between the polysilicon columns.
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