Bumpless semiconductor device
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United States of America Patent
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Dec 29, 2009
Grant Date -
Nov 9, 2006
app pub date -
Jul 14, 2006
filing date -
Feb 19, 2001
priority date (Note) -
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Abstract
. This bumpless semiconductor device can be manufactured by (a) causing conductive particles to be electrostatically adsorbed onto one face of a flat plate; and (b) overlaying the surface of the plate having the adsorbed conductive particles on the surface of electrode pads of a bumpless semiconductor device which is provided with the electrode pads on the surface thereof and with a passivation film at the periphery of the electrode pads, and ultrasonically welding this assembly, so that the conductive particles are metallically bonded and transferred from the flat plate to the electrode pads.
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