Phase change random access memory and method of operating the same
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United States of America Patent
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Jan 5, 2010
Grant Date -
Mar 8, 2007
app pub date -
Feb 23, 2006
filing date -
Sep 13, 2005
priority date (Note) -
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Abstract
A phase change random access memory (PRAM), and a method of operating the PRAM are provided. In the PRAM comprising a switching element and a storage node connected to the switching element, the storage node comprises a first electrode, a second electrode, a phase change layer between the first electrode and a second electrode, and a heat efficiency improving element formed between the first electrode and the phase change layer. The heat efficiency improving element may be one of a carbon nanotube (CNT) layer, a nanoparticle layer, and a nanodot layer, and the nanoparticle layer may be a fullerene layer.
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