Systems and methods for creating crystallographic-orientation controlled poly-silicon films

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United States of America Patent

PATENT NO 7645337
SERIAL NO

10994205

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Abstract

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In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystallographic orientation. In particular, a method of processing a film on a substrate includes generating a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation.

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Patent Owner(s)

  • THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Im, James S New York, US 82 2444
van, der Wilt Paul Christian New York, US 2 128

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