Programmable matrix array with chalcogenide material
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United States of America Patent
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Jan 12, 2010
Grant Date -
May 11, 2006
app pub date -
Aug 22, 2005
filing date -
Nov 8, 2004
priority date (Note) -
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Abstract
A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer in series with the phase-change material and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.
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