Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 19, 2010
Grant Date -
Jan 29, 2009
app pub date -
Oct 2, 2008
filing date -
Feb 4, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully