Ceramic coating member for semiconductor processing apparatus
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United States of America Patent
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Jan 19, 2010
Grant Date -
Sep 20, 2007
app pub date -
Mar 20, 2007
filing date -
Mar 20, 2006
priority date (Note) -
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status (Latency Note)
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Abstract
Improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment. A ceramic coating member for a semiconductor processing apparatus comprises a porous layer made of an oxide of an element in Group IIIb of the Periodic Table coated directed or through an undercoat on the surface of the substrate of a metal or non-metal and a secondary recrystallized layer of the oxide formed on the porous layer through an irradiation treatment of a high energy such as electron beam and laser beam.
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International Classification(s)
- C08J:WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTE....
- C23C:COATING METALLIC MATERIAL; COATING MATERIAL WITH M....
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- B05D:PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MAT....
- C04B:LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREO....
- B01J:CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, CO....
- C01F:COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUM....
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