Semiconductor structure including mixed rare earth oxide formed on silicon

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Jan 19, 2010
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Aug 22, 2008
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Jul 5, 2001

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Abstract

A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

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GLOBALFOUNDRIES INC.

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Bojarczuk,, Jr Nestor Alexander	Poughkeepsie, US	2	12
Buchanan, Douglas Andrew	Cortlandt Manor, US	11	194
Guha, Supratik	Chappaqua, US	146	2312
Narayanan, Vijay	New York, US	308	5551
Ragnarsson, Lars-Ake	New York, US	23	790

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Semiconductor structure including mixed rare earth oxide formed on silicon

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United States of America Patent

12197079

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US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
January 19, 2010	US,7648864,B2 US7648864B2	GRANTED PATENT AS SECOND PUBLICATION
December 18, 2008	US,20080308831,A1 US20080308831A1	FIRST PUBLISHED PATENT APPLICATION

PATENT NO	7648864
SERIAL NO	12197079
DOCKET NO

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12197079

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