Land patterns for a semiconductor stacking structure and method therefor
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United States of America Patent
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Jan 26, 2010
Grant Date -
N/A
app pub date -
Mar 3, 2006
filing date -
Mar 3, 2006
priority date (Note) -
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Abstract
A semiconductor device has a substrate. A semiconductor die is coupled to a first surface of the substrate. An encapsulate is placed over the semiconductor die. A first plurality of lands is formed on the first surface of the substrate around the encapsulate. A second plurality of lands is formed on a second surface of the substrate. A first group of the second plurality of lands has a pitch and a second group of the second plurality of lands has a pitch of a different length.
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