Ferroelectric memory having a refresh control circuit capable of recovering residual polarization of unselected memory cells
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United States of America Patent
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Jan 26, 2010
Grant Date -
Oct 11, 2007
app pub date -
Jun 16, 2005
filing date -
Jun 23, 2004
priority date (Note) -
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Abstract
A memory wherein any 'disturb effect' can be suppressed in which data in unselected memory cells are lost. This memory has a memory cell array (1) including bit lines, word lines, which are disposed to intersect the bit lines, and memory cells (12) each connected between bit and word lines. In this memory, an access operation, which includes at least one of read, rewrite and write operations, is made to a selected memory cell (12). During this access operation, it is performed to apply to the memory cell (12) a first voltage pulse, which provides an electrical field in a first direction so as to invert a stored data, and a second voltage pulse, which provides as electrical field in the opposite direction to the first one so as not to invert the stored data. In addition, a recovery operation for recovering a residual polarization amount is made to the memory cell (12).
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