Semiconductor device and method of manufacturing the same
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United States of America Patent
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Feb 2, 2010
Grant Date -
Sep 25, 2008
app pub date -
May 16, 2008
filing date -
Jun 14, 2002
priority date (Note) -
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status (Latency Note)
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Abstract
Two semiconductor substrates are first bonded together by means of a metal bump, while respective one-side surfaces on which device patterns are formed are faced each other, and a resin is then filled into a gap between the respective one-side surfaces and thereafter each of the semiconductor substrates is polished and thinned to a prescribed thickness. Furthermore, a via hole and an insulating film are formed; part of a portion in contact with the metal bump, of the insulating film, is opened; the inside of the via hole is filled with a conductor; and an electrode pad is formed on the conductor, to thereby form structures. Finally, a required number of structures are electrically connected with each other through the electrode pad and stacked to thereby obtain a semiconductor device.
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