Method for forming Ta-Ru liner layer for Cu wiring
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United States of America Patent
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Feb 2, 2010
Grant Date -
Jun 18, 2009
app pub date -
Dec 12, 2007
filing date -
Dec 12, 2007
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Abstract
A method of forming a Ta—Ru metal liner layer for Cu wiring includes: (i) conducting atomic deposition of Ta X times, each atomic deposition of Ta being accomplished by a pulse of hydrogen plasma, wherein X is an integer such that a surface of an underlying layer is not covered with Ta particles; (ii) after step (i), conducting atomic deposition of Ru Y times, each atomic deposition of Ru being accomplished by a pulse of hydrogen plasma, wherein Y is an integer such that the Ta particles are not covered with Ru particles; and (iii) repeating steps (i) and (ii) Z times, thereby forming a Ta—Ru metal liner layer on a Cu wiring substrate.
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